Document
type: Class

Academic Article
type: Class

Continuant
type: Class

Entity
type: Class

Generically Dependent Continuant
type: Class

Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime
type: Document
related by: 524942
related by: 524944
type: Thing
type: Article
type: Information Content Entity
language: Inglese
type: Academic Article
type: Entity
related by: 524943
type: Generically Dependent Continuant
most specific type: Academic Article
type: Continuant

Article
type: Class

Inglese
type: Language

524942
type: Entity
type: BFO_0000020
type: Authorship
type: Relationship
type: Continuant
type: Thing
relates: Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime

524944
type: Entity
type: BFO_0000020
type: Authorship
type: Relationship
type: Continuant
type: Thing
relates: Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime

Information Content Entity
type: Class

524943
type: Entity
type: BFO_0000020
type: Authorship
type: Relationship
type: Continuant
type: Thing
relates: Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime

RDF description of Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime - http://irises.unibg.it/resource/item/24654
rights: termsOfUse
date: 2026-08-19T04:03:59
publisher: Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime
type: Document