Radiation effects on the noise parameters of a 0.18 mu m CMOS technology for detector front-end applications

This paper presents a study of the effects of ionizing radiation on devices belonging to a 0.18 um CMOS process, in view of applications to the design of front-end integrated circuits for detectors in high energy physics experiments. Static, signal and noise performances of devices with various gate dimensions were monitored before and after exposure to gamma-rays from a 60Co source up to a 300 kGy(Si) total dose.