Kinetics of disorder-order transition of Ti-W oxide thin-film sensors

The kinetics of structural changes of Ti-W oxide thin films has been studied by X-ray diffraction and Raman spectroscopy. The XRD patterns were measured after each annealing treatment. As the number of annealing treatments increased, a progressive ordering of the as-grown amorphous film was observed by XRD and confirmed by Raman measurements. An explanation of the ordering is given in terms of segregation of Ti impurities at the surface.