The system A12O3 and (Sr,Mg)-doped LaGaO3: Phase composition and electrical properties

Mixtures of a-Al2O3 and La0.8Sr 0.2Ga0.8Mg0.2O3 -δ, with αAl2O3 concentrations ranging from I to 20 wt.%, were uniaxially and isostatically pressed and finally sintered at 1500 °C for 4 h. The phase composition and microstructure were investigated by X-ray powder diffraction and scanning electron microscopy techniques. The electrical properties were studied by complex impedance spectroscopy in a wide range of temperatures (200-800 °C) in air. In the sintered bodies pure a-Al 2O3 was not detected; the partial substitution of Al for Ga was suggested entailing the formation of the solid solutions of perovskite-type (La0.8Sr0.2)(Ga1-x-yAl xMgxO3δ and La0.8SSr 0.2Ga1-xAlx O3δ. α-Al2O3 added to La0.8Sr 0.2Ga0.8Mg0.2O3-δinhibited the grain growth of the majority phase. Under isothermal conditions, the electrical conductivity decreases with increasing alumina content, while the activation energies increase.