Monolithic pixel sensors in deep-submicron SOI Technology

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 μ m FD-SOI process, featuring analog and digital pixels on a 10 μ m pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 μ m FD-SOI process are briefly discussed.