Radiation hardness studies on CMOS monolithic pixel sensors

This paper presents irradiation studies performed on a CMOS monolithic pixel sensor prototype implementing different optimizations of the pixel cell aimed at a superior radiation tolerance. Irradiations with 200 keV electrons up to a total dose of 1.1 Mrad have been performed in view of the utilization of such a design in Transmission Electron Microscopy (TEM) applications. Comparative irradiations were performed with 29 MeV protons up to a 2 Mrad total dose and with 1–14 MeV neutrons up to fluences in excess of 1013 neq cm−2. Experimental results show an improved performance of pixels designed with Enclosed Layout Transistor (ELT) rules and an optimized layout of the charge collecting diodes.