First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM
Articolo
Data di Pubblicazione:
2011
Citazione:
(2011). First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187110
Abstract:
In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.
Tipologia CRIS:
1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays
Elenco autori:
Mattiazzo, Serena; Bisello, D.; Giubilato, P.; Kaminsky, A.; Pantano, D.; Silvestrin, L.; Tessaro, M.; Wyss, J.
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