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Pubblicazioni

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Rivista

Codice:

E079943

ISSN:

0018-9499

Dati Generali

Dati Generali

Pubblicazioni (75)

Ordina Pubblicazioni:

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65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment

Articolo

A 32-Channel Readout ASIC for X-Ray Spectrometry and Tracking in the GAPS Experiment

Articolo

A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment

Articolo

A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics

Articolo

A Front-End Channel in 65 nm CMOS for Pixel Detectors at the HL-LHC Experiment Upgrades

Articolo

Analog Readout Channel for Continuous-Wave X-Ray Science Applications

Articolo

Assessment of a low-power 65 nm CMOS technology for analog front-end design

Articolo

CMOS MAPS in a homogeneous 3D process for charged particle tracking

Articolo

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Articolo

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Articolo

Characterization of a 28 nm CMOS Technology for Analog Applications in High Energy Physics

Articolo

Characterization of bulk damage in CMOS MAPS with Deep N-Well collecting electrode

Articolo

Charge signal processors in a 130 nm CMOS technology for the sparse readout of small pitch monolithic and hybrid pixel sensors

Articolo

Comparison of Ionizing Radiation Effects in 0.18 and 0.25 um CMOS Technologies for Analog Applications

Articolo

Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology

Articolo

Dark Count Rate Degradation in CMOS SPADs Exposed to X-Rays and Neutrons

Articolo

Design and performance of a DNW CMOS Active Pixel Sensor for the ILC vertex detector

Articolo

Design of Time Invariant Analog Front-End Circuits for Deep N-Well CMOS MAPS

Articolo

Design optimization of charge preamplifiers with CMOS processes in the 100 nm gate length regime

Articolo

Development of the DEPFET Sensor With Signal Compression: A Large Format X-Ray Imager With Mega-Frame Readout Capability for the European XFEL

Articolo

Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose

Contributo in Atti di convegno

Dynamic Compression of the Signal in a Charge Sensitive Amplifier: Experimental Results

Articolo

Dynamic compression of the signal in a charge sensitive amplifier: from concept to design

Articolo

Editorial Conference Comments by the Editors

Articolo

Effects of Interface Donor Trap States on Isolation Properties of Detectors Operating at High-Luminosity LHC

Articolo

Effects of gamma-rays on JFET devices and circuits fabricated in a detector-compatible process

Articolo

Effects of substrate thinning on the properties of quadruple well CMOS MAPS

Articolo

Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

Articolo

Experimental study and modeling of the white noise sources in submicron P- and N-MOSFETs

Articolo

FSSR2, a self-triggered low noise readout chip for silicon strip detectors

Articolo

Fermilab silicon strip readout chip for BTeV

Articolo

Front-end performance and charge collection properties of heavily irradiated DNW MAPS

Articolo

Gate Current Noise in Ultrathin Oxide MOSFETs and Its Impact on the Performance of Analog Front-End Circuits

Articolo

Heavily irradiated 65-nm readout chip with asynchronous channels for future pixel detectors

Articolo

IEEE Transactions on Nuclear Science: Symposium on radiation measurements and applications (SORMA WEST 2012), Oakland (CA), USA, May 14-17, 2012

Curatela

Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime

Articolo

Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Articolo

Initial test results of an ionization chamber shower detector for a LHC luminosity monitor

Articolo

Instrumentation for noise measurements on CMOS transistors for fast detector preamplifiers

Articolo

Investigating Degradation Mechanisms in 130 nm and 90 nm Commercial CMOS Technologies Under Extreme Radiation Conditions

Articolo

Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy

Articolo

Ion Impact Detection and Micromapping With a SDRAM for IEEM Diagnostics and Applications

Articolo

Ionizing Radiation Effects of 3 Grad TID on Analog and Noise Performance of 28nm CMOS Technology

Articolo

Ionizing Radiation Effects on the Noise of 65 nm CMOS Transistors for Pixel Sensor Readout at Extreme Total Dose Levels

Articolo

JFET front-end circuits integrated in a detector-grade silicon substrate

Articolo

Low-Noise Analog Channel for the Readout of the Si(Li) Detector of the GAPS Experiment

Articolo

Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation

Articolo

Modeling charge loss in CMOS MAPS exposed to non-ionizing radiation

Articolo

Monolithic pixel sensors for fast silicon vertex trackers in a quadruple well CMOS technology

Articolo

Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems

Articolo

Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics

Articolo

Noise performance of 0.13 µm CMOS technologies for detector front-end applications

Articolo

On-Chip Fast Data Sparsification for a Monolithic 4096-Pixel Device

Articolo

Operational Experience with the GEM Detector Assembly Lines for the CMS Forward Muon Upgrade

Articolo

Optimization of signal extraction and front-end design in a fast, multigap ionization chamber

Articolo

Optimization of the 65-nm CMOS Linear Front-End Circuit for the CMS Pixel Readout at the HL-LHC

Articolo

Performance, radiation damage, and future plans of the BaBar silicon vertex tracker

Articolo

Pixel-Level charge and current injection circuit for high accuracy calibration of the DSSC Chip at the European XFEL

Articolo

Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon

Articolo

Quadruple well CMOS MAPS with time-invariant processor exposed to ionizing radiation and neutrons

Articolo

Qualification and Integration Aspects of the DSSC Mega-Pixel X-Ray Imager

Articolo

Radiation hardness perspectives for the design of analog detector readout circuits in the 0.18-um CMOS generation

Articolo

Radiation tolerance of devices and circuits in a 3D technology based on the vertical integration of two 130-nm CMOS layers

Articolo

Resolution limits in 130 nm and 90 nm CMOS technologies for analog front-end applications

Articolo

Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions

Articolo

Signal and Noise Performance of a 110-nm CMOS Technology for Photon Science Applications

Articolo

Submicron CMOS technologies for low-noise analog front-end Circuits

Articolo

Survey of noise performances and scaling effects in deep submicrometer CMOS devices from different foundries

Articolo

TID effects in deep N-well CMOS monolithic active pixel sensors

Articolo

TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs

Articolo

The MiniSDD-Based 1-Mpixel Camera of the DSSC Project for the European XFEL

Articolo

Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors

Articolo

Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology

Articolo

Trends in the design of spectroscopy amplifiers for room temperature solid state detectors

Articolo

X-ray and Particle Detection with the Si(Li) Tracker Module of the GAPS Experiment

Articolo

No Results Found

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