First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM

Academic Article

Publication Date:

2011

Short description:

(2011). First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187110

abstract:

In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.

Iris type:

1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays

List of contributors:

Mattiazzo, Serena; Bisello, D.; Giubilato, P.; Kaminsky, A.; Pantano, D.; Silvestrin, L.; Tessaro, M.; Wyss, J.

Handle:

https://aisberg.unibg.it/handle/10446/187110

Published in:

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT

Journal

Research

Concepts

Academic field (2000 version)

Settore FIS/01 - Fisica Sperimentale

First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM

Mattiazzo, Serena; Bisello, D.; Giubilato, P.; Kaminsky, A.; Pantano, D.; Silvestrin, L.; Tessaro, M.; Wyss, J.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT

Research

Concepts