A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics

... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Re, Valerio; Traversi, Gianluca. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/27966. ...

Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems

... For this purpose, a method for optimizing the noise performances of charge measuring systems has been applied to the experimental data from single device characterization.. TRAVERSI Gianluca. RE Valerio. MANGHISONI Massimo ...

Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation

... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Re, Valerio; Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Traversi, Gianluca. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/24234. ...

TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs

... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Ratti, Lodovico; Gaioni, Luigi; Manghisoni, Massimo; Re, Valerio; Traversi, Gianluca. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. http://ieeexplore.ieee.org/xpl/RecentIssue.jsp? ...

Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime

... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Re, Valerio; Manghisoni, Massimo; Traversi, Gianluca; Ratti, Lodovico; Speziali, Valeria. 2007. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/21370. ...

Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology

... Re, Valerio; Manghisoni, Massimo; Ratti, Lodovico; Speziali, Valeria; Traversi, Gianluca. 2006. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/20139. (2006). ...

Noise behavior of a 180 nm CMOS SOI technology for detector front-end electronics

... Re, Valerio; Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Speziali, Valeria; Traversi, Gianluca; Yarema, Ray. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2008. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/21712. ...

Comprehensive study of total ionizing dose damage mechanisms and their effects on noise sources in a 90 nm CMOS technology

... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Re, Valerio; Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Traversi, Gianluca. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/21713. ...

Comparison of Ionizing Radiation Effects in 0.18 and 0.25 um CMOS Technologies for Analog Applications

... The results are used to point out the different radiation hardness properties of the examined technologies, belonging to different CMOS generations.. MANGHISONI Massimo. RE Valerio. TRAVERSI Gianluca ...

Design of Time Invariant Analog Front-End Circuits for Deep N-Well CMOS MAPS

... Ratti, Lodovico; Manghisoni, Massimo; Re, Valerio; Traversi, Gianluca. IEEE TRANSACTIONS ON NUCLEAR SCIENCE. 2009. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/22894. ...