Design and test of a 65nm CMOS front-end with zero dead time for next generation pixel detectors
Contributo in Atti di convegno
Data di Pubblicazione:
2018
Citazione:
(2018). Design and test of a 65nm CMOS front-end with zero dead time for next generation pixel detectors . In POS PROCEEDINGS OF SCIENCE. Retrieved from http://hdl.handle.net/10446/129958
Abstract:
This work is concerned with the experimental characterization of a synchronous analog processor with zero dead time developed in a 65 nm CMOS technology, conceived for pixel detectors at the HL-LHC experiment upgrades. It includes a low noise, fast charge sensitive amplifier with detector leakage compensation circuit, and a compact, single ended comparator able to correctly process hits belonging to two consecutive bunch crossing periods. A 2-bit Flash ADC is exploited for digital conversion immediately after the preamplifier. A description of the circuits integrated in the front-end processor and the initial characterization results are provided.
Tipologia CRIS:
1.4.01 Contributi in atti di convegno - Conference presentations
Elenco autori:
Gaioni, Luigi; Braga, D.; Christian, D.; Deptuch, G.; Fahim, F.; Nodari, Benedetta; Ratti, L.; Re, Valerio; Zimmerman, T.
Link alla scheda completa:
Titolo del libro:
Proceedings, Topical Workshop on Electronics for Particle Physics (TWEPP17) : Santa Cruz, CA, USA, September 11-15, 2017
Pubblicato in: