Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics

This paper is devoted to studying the effects of g radiation on the electrical parameters of complementary bipolar junction transistors, part of an SOI (silicon on insulator) BiCMOS process, in view of the design of fast, rad-hard analog blocks. A survey of the total ionizing dose response has been carried out paying particular attention to its dependence on the layout and process choices. The final integrated doses are compatible with operation in the space environment and in high-energy physics experiments involving moderately high-radiation levels. The issue of enhanced low-dose rate sensitivity (ELDRS) has been addressed by a preliminary characterization of transistors exposed to 60Co sources with different activities.