Characterization of new FBK double-sided 3D sensors with improved breakdown voltage

We report on the characterization of a new version of double-sided 3D sensors fabricated at FBK (Trento, Italy). Owing to a modified design and improved technology, the new devices feature a sizable increase of the breakdown voltage with respect to the ones previously fabricated at FBK. Before irradiation, the breakdown voltage is in the range from ~70 V to ~ 130 V, after irradiation up to large fluences, it is typically larger than 200 V, that is high enough for proper 3D sensor biasing even after very high radiation fluences like those foreseen at the High Luminosity LHC.