Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation

Articolo
Data di Pubblicazione:
2012
Citazione:
(2012). Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187171
Abstract:
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-on-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a low energy phosphorus implantation is performed on the back-plane. The response to X-rays from 2.12 to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.
Tipologia CRIS:
1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays
Elenco autori:
Battaglia, Marco; Bisello, Dario; Celestre, Richard; Contarato, Devis; Denes, Peter; Mattiazzo, Serena; Tindall, Craig
Link alla scheda completa:
https://aisberg.unibg.it/handle/10446/187171
Pubblicato in:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
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Settore FIS/01 - Fisica Sperimentale