Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation

Academic Article

Publication Date:

2012

Short description:

(2012). Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation [journal article - articolo]. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. Retrieved from http://hdl.handle.net/10446/187171

abstract:

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-on-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a low energy phosphorus implantation is performed on the back-plane. The response to X-rays from 2.12 to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.

Iris type:

1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays

List of contributors:

Battaglia, Marco; Bisello, Dario; Celestre, Richard; Contarato, Devis; Denes, Peter; Mattiazzo, Serena; Tindall, Craig

Handle:

https://aisberg.unibg.it/handle/10446/187171

Published in:

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT

Journal

Research

Concepts

Academic field (2000 version)

Settore FIS/01 - Fisica Sperimentale

Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation

Battaglia, Marco; Bisello, Dario; Celestre, Richard; Contarato, Devis; Denes, Peter; Mattiazzo, Serena; Tindall, Craig

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT

Research

Concepts