Radiation tolerance of a moderate resistivity substrate in a modern CMOS process

The LePix project aims at developing monolithic pixel detectors in a 90 nm CMOS technology ported on moderate resistivity substrate. The radiation tolerance of the base material, which is an order of magnitude higher doped than standard high resistivity detectors, and which underwent the full advanced CMOS process, has been investigated. Diodes of about 1 mm2 and pixel matrices were irradiated with neutrons at fluences from 1012 n/cm2 to and characterized using CV and IV measurements. Matrices have also been irradiated with Xrays and withstand at least 10 Mrad.