Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons

The paper reports the 65nm CMOS transistors exposed to 3MeV protons to study the total ionizing dose (TID) effect and displacement damage (DD). The proton fluence of 7×1014 p/cm2 is equivalent to 9.5MGy(SiO2) total dose and 7.7×1015 n/cm2 1MeV neutron equivalent fluence. Under this unprecedented hostile environment, we observed that the degradation of 65nm CMOS transistors was mainly due to TID effect. Additional results from 10keV X-ray irradiation implied no visible DD-induced degradation could be observed even for this extremely high proton fluence.