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Status and perspectives of pixel sensors based on 3D vertical integration

Academic Article
Publication Date:
2014
abstract:
This paper reviews the most recent developments of 3D integration in the field of silicon pixel sensors and readout integrated circuits. This technology may address the needs of future high energy physics and photon science experiments by increasing the electronic functional density in small pixel readout cells and by stacking various device layers based on different technologies, each optimized for a different function. Current efforts are aimed at improving the performance of both hybrid pixel detectors and of CMOS sensors. The status of these activities is discussed here, taking into account experimental results on 3D devices developed in the frame of the 3D-IC consortium. The paper also provides an overview of the ideas that are being currently devised for novel 3D vertically integrated pixel sensors.
Iris type:
1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays
List of contributors:
Re, Valerio
Authors of the University:
RE Valerio
Handle:
https://aisberg.unibg.it/handle/10446/31161
Published in:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Journal
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Overview

URL

http://www.journals.elsevier.com/nuclear-instruments-and-methods-in-physics-research-section-a-accelerators-spectrometers-detectors-and-associated-equipment

Research

Concepts


Settore ING-INF/01 - Elettronica
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