Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics

... The issue of enhanced low-dose rate sensitivity (ELDRS) has been addressed by a preliminary characterization of transistors exposed to 60Co sources with different activities.. MANGHISONI Massimo. RE Valerio. TRAVERSI Gianluca ...

A quadruple well CMOS MAPS prototype for the Layer0 of the SuperB SVT

... This work introduces the channel readout design features of the chip Apsel4well developed with the mentioned approach and shows results of device simulations of a 3×3 pixel matrix.. TRAVERSI Gianluca ...

The readout of the LHC beam luminosity monitor: accurate shower energy measurements at a 40 MHz repetition rate

... This paper discusses the solutions adopted to comply with these requirements.. TRAVERSI Gianluca. MANGHISONI Massimo. RE Valerio ...

Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

... On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.. MANGHISONI Massimo. GAIONI Luigi. TRAVERSI Gianluca. RE Valerio ...

Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors

... A prototype chip designed in a 65 nm CMOS process including deep n-well MAPS structures and a fast front-end conceived for the readout of high-resistivity pixel sensors will be introduced.. MANGHISONI Massimo. RE Valerio. GAIONI Luigi. TRAVERSI Gianluca ...

Vertically integrated monolithic pixel sensors for charged particle tracking and biomedical imaging

... Device physics simulations have been performed to evaluate the collection properties and detection efficiency of the proposed vertically integrated structures.. GAIONI Luigi. MANGHISONI Massimo. TRAVERSI Gianluca. RE Valerio ...

2D and 3D CMOS MAPS with high performance pixel-level signal processing

... The main features of this new 3D monolithic detector are presented in this paper.. MANGHISONI Massimo. TRAVERSI Gianluca. GAIONI Luigi. RE Valerio ...

A new approach to the design of monolithic active pixel detectors in 0.13 µm triple well CMOS technology

... .; Simi, G.; Walsh, J.; Ratti, L.; Speziali, V.; Manghisoni, Massimo; Re, Valerio; Traversi, Gianluca; Bosisio, L.; Giacomini, G.; Lanceri, L.; Rachevskaia, I.; Vitale, L.. ...

A novel monolithic active pixel detector in a 0.13 µm triple well CMOS technology with pixel level analog processing

... In this work we present the performance of the front-end electronics and the response of the sensor to ionizing radiation.. MANGHISONI Massimo. RE Valerio. TRAVERSI Gianluca ...

The design of fast analog channels for the readout of strip detectors in the inner layers of the SuperB SVT

... This paper discusses the solutions that are adopted in this chip for the various blocks of the analog channels, and will present the simulation results for the current design along with the expected performance in terms of parameters such as signal-to-noise ratio, dynamic range, linearity, power dissipation.. TRAVERSI Gianluca. GAIONI Luigi. MANGHISONI Massimo. RE Valerio ...