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Risultati ricerca per 'gianluca traversi' , limitato al tipo 'Articolo'
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  • Analog front-end for pixel sensors in a 3D CMOS technology for the SuperB Layer0
    Articolo

    ... 2011. IL NUOVO CIMENTO C. Manazza, Alessia; Gaioni, Luigi; Ratti, Lodovico; Traversi, Gianluca; Zucca, Stefano; Re, Valerio. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/26025. ...

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  • A 65-nm CMOS Prototype Chip With Monolithic Pixel Sensors and Fast Front-End Electronics
    Articolo

    ... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Re, Valerio; Traversi, Gianluca. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/27966. ...

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  • A Time-over-Threshold based analog front-end in 28 nm CMOS for pixel detectors in future colliders
    Articolo

    ... Retrieved from https://hdl.handle.net/10446/281290. GAIONI Luigi. RE Valerio. TRAVERSI Gianluca ...

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  • Development and Testing of a Miniaturized Platform for Photoplethysmography
    Articolo

    ... Moreover, an investigation of the best body measurement location has been assessed.. TRAVERSI Gianluca. GAIONI Luigi ...

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  • Monolithic Active Pixel Sensors for the vertex detector at the International Linear Collider
    Articolo

    ... In this chip, named SDR0 (Sparsified Digital Readout), for the first time we implemented a sparsification logic at the pixel level.. MANGHISONI Massimo. RE Valerio. TRAVERSI Gianluca ...

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  • Radiation effects on the noise parameters of a 0.18 mu m CMOS technology for detector front-end applications
    Articolo

    ... Manghisoni, Massimo; Ratti, Lodovico; Traversi, Gianluca. 2003. NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/117947. (2003). ...

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  • Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems
    Articolo

    ... For this purpose, a method for optimizing the noise performances of charge measuring systems has been applied to the experimental data from single device characterization.. TRAVERSI Gianluca. RE Valerio. MANGHISONI Massimo ...

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  • Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation
    Articolo

    ... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Re, Valerio; Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Traversi, Gianluca. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/24234. ...

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  • TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs
    Articolo

    ... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Ratti, Lodovico; Gaioni, Luigi; Manghisoni, Massimo; Re, Valerio; Traversi, Gianluca. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. http://ieeexplore.ieee.org/xpl/RecentIssue.jsp? ...

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  • Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime
    Articolo

    ... IEEE TRANSACTIONS ON NUCLEAR SCIENCE. Re, Valerio; Manghisoni, Massimo; Traversi, Gianluca; Ratti, Lodovico; Speziali, Valeria. 2007. 1.1.01 Articoli/Saggi in rivista - Journal Articles/Essays. https://hdl.handle.net/10446/21370. ...

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