Response of SOI bipolar transistors exposed to gamma-rays under different dose rate and bias conditions

This work is devoted to the analysis of g-ray effects on the behavior of bipolar junction transistors belonging to a silicon on insulator technology. Such a process is currently being investigated in order to assess its suitability for use in radiation-resistant applications, namely in the design of readout electronics for radiation detectors in high energy physics experiments and for operation in the space environment. Possible sensitivity to low dose-rate was tested by exposing the devices to g -ray sources with different activities. High dose rate irradiations were performed with the devices biased in different operating regions in order to evaluate the effects of bias conditions on the device sensitivity to radiation. Radiation tolerant, low noise design of charge preamplifiers is discussed in the last section of the paper, on the basis of the results relevant to single device characterization